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ESD3V3U1U Series
Characteristics
Table 4
RF Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Line capacitance
Serie inductance
1)
C L
L S
–
–
–
0.4
0.2
0.4
0.6
–
–
pF
nH
nH
V R = 0 V, f = 1 MHz
ESD3V3U1U-02LS
ESD3V3U1U-02LRH
1) Total capacitance line to ground
Table 5
ESD Characteristics at T A = 25 °C, unless otherwise specifie
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Clamping voltage
V CL
–
19
–
V
I PP = 16 A,
from Pin 1 to Pin 2
–
28
–
V
I PP = 30 A,
from Pin 1 to Pin 2
Forward clamping voltage V FC
–
10
–
V
I PP = 16 A,
from Pin 2 to Pin 1
–
17
–
V
I PP = 30 A,
from Pin 2 to Pin 1
Dynamic resistance
1)
R DYN
–
0.6
–
?
Pin 1 to Pin 2
–
0.5
–
?
Pin 2 to Pin 1
1) Please refer to Application Note AN210. TLP parameter: Z 0 = 50 Ω , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns
to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I PP1 = 10 A and
I PP2 = 40 A.
Final Data Sheet
9
Revision 1.0, 2011-04-12
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